- Manufacturer：
-
- Nexperia (2)
- Rectron USA (4)
- Drain to Source Voltage (Vdss)：
-
- Drive Voltage (Max Rds On, Min Rds On)：
-
- FET Type：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Mounting Type：
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- Operating Temperature：
-
- Package / Case：
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- Power Dissipation (Max)：
-
- Product Status：
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- Rds On (Max) @ Id, Vgs：
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- Supplier Device Package：
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- Vgs (Max)：
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- Vgs(th) (Max) @ Id：
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13 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor | TRANS SJT 1200V 100A... |
3,363
In-stock
|
Inquiry | ||
|
Rectron USA | MOSFET N-CH 60V 100A... |
4,664
In-stock
|
Inquiry | ||
|
Rectron USA | MOSFET N-CHANNEL... |
2,411
In-stock
|
Inquiry | ||
|
|
Rectron USA | MOSFET N-CHANNEL... |
2,774
In-stock
|
Inquiry | ||
|
Rectron USA | MOSFET N-CHANNEL... |
1,209
In-stock
|
Inquiry | ||
|
NXP Semiconductors | 100A, 40V, 0.00185OHM, N... |
4,785
In-stock
|
Inquiry | ||
|
Nexperia | 100A, 40V, 0.00185OHM, N... |
2,535
In-stock
|
Inquiry | ||
|
Nexperia | MOSFET N-CH 60V LF... |
4,521
In-stock
|
Inquiry | ||
|
Diodes Incorporated | MOSFET BVDSS: 61V~... |
2,497
In-stock
|
Inquiry | ||
|
|
Diodes Incorporated | MOSFET BVDSS: 61V~... |
4,984
In-stock
|
Inquiry | ||
|
|
GeneSiC Semiconductor | TRANS SJT 600V 100A ... |
1,812
In-stock
|
Inquiry | ||
|
|
GeneSiC Semiconductor | TRANS SJT 1700V 100A... |
2,897
In-stock
|
Inquiry | ||
|
|
Infineon Technologies | MOSFET N-CH 100V 100... |
734
In-stock
|
Inquiry |