- Drive Voltage (Max Rds On, Min Rds On)：
-
- FET Feature：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Mounting Type：
-
- Operating Temperature：
-
- Package / Case：
-
- Power Dissipation (Max)：
-
- Product Status：
-
- Rds On (Max) @ Id, Vgs：
-
- Supplier Device Package：
-
30 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
,%20SC-63.JPG)
|
onsemi | MOSFET N-CH 100V 6.8... |
897
In-stock
|
Inquiry | ||
|
Vishay | MOSFET N-CH 600V 6.8... |
4,928
In-stock
|
Inquiry | ||
|
onsemi | MOSFET N-CH 600V 6.8... |
3,308
In-stock
|
Inquiry | ||
|
Infineon Technologies | N-CHANNEL POWER M... |
4,909
In-stock
|
Inquiry | ||
|
Infineon Technologies | N-CHANNEL POWER ... |
3,158
In-stock
|
Inquiry | ||
|
|
Fairchild Semiconductor | MOSFET N-CH 100V 6.8... |
4,230
In-stock
|
Inquiry | ||
|
Fairchild Semiconductor | MOSFET N-CH 200V 6.8... |
4,107
In-stock
|
Inquiry | ||
|
|
Infineon Technologies | N-CHANNEL POWER M... |
4,613
In-stock
|
Inquiry | ||
|
Harris Corporation | 6.8A 600V 1.200 OHM N-C... |
3,577
In-stock
|
Inquiry | ||
|
onsemi | POWER FIELD-EFFE... |
3,545
In-stock
|
Inquiry | ||
|
Vishay | MOSFET N-CH 100V 6.8... |
1,298
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET N-CH 600V 6.8... |
4,136
In-stock
|
Inquiry | ||
|
Infineon Technologies | CONSUMER |
1,653
In-stock
|
Inquiry | ||
|
|
Vishay | MOSFET N-CH 100V 6.8... |
4,628
In-stock
|
Inquiry | ||
|
Infineon Technologies | N-CHANNEL POWER M... |
2,432
In-stock
|
Inquiry | ||
|
Infineon Technologies | N-CHANNEL POWER M... |
3,505
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET N-CH 600V 6.8... |
4,844
In-stock
|
Inquiry | ||
|
Infineon Technologies | IPN60R1K0CEATMA1 - ... |
2,288
In-stock
|
Inquiry | ||
|
|
Vishay | MOSFET N-CH 600V 6.8... |
1,412
In-stock
|
Inquiry | ||
|
Vishay | MOSFET N-CH 500V 6.8... |
2,076
In-stock
|
Inquiry |