- Drain to Source Voltage (Vdss)：
-
- FET Feature：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Mounting Type：
-
- Operating Temperature：
-
- Package / Case：
-
- Power Dissipation (Max)：
-
- Product Status：
-
- Rds On (Max) @ Id, Vgs：
-
- Supplier Device Package：
-
- Technology：
-
- Vgs(th) (Max) @ Id：
-
61 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor | SIC MOSFET N-CH 41... |
4,117
In-stock
|
Inquiry | ||
|
UnitedSiC | MOSFET N-CH 650V 41A... |
2,398
In-stock
|
Inquiry | ||
|
Vishay | MOSFET N-CH 100V 41A... |
1,085
In-stock
|
Inquiry | ||
|
|
Harris Corporation | MOSFET N-CH 100V 41A... |
2,620
In-stock
|
Inquiry | ||
|
NTE Electronics, Inc. | MOSFET N-CHANNEL... |
1,789
In-stock
|
Inquiry | ||
|
STMicroelectronics | MOSFET N-CH 100V 41A... |
1,808
In-stock
|
Inquiry | ||
|
Microchip Technology | MOSFET N-CH 800V 41A... |
816
In-stock
|
Inquiry | ||
|
Microchip Technology | MOSFET N-CH 500V 41A... |
3,274
In-stock
|
Inquiry | ||
|
NXP Semiconductors | MOSFET N-CH 100V 41A... |
1,481
In-stock
|
Inquiry | ||
|
Microchip Technology | MOSFET N-CH 800V 41A... |
2,528
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET N-CH 650V 41A... |
2,191
In-stock
|
Inquiry | ||
|
GeneSiC Semiconductor | SIC MOSFET N-CH 41... |
3,912
In-stock
|
Inquiry | ||
|
Microchip Technology | MOSFET SIC 3300 V 80... |
1,372
In-stock
|
Inquiry | ||
|
onsemi | MOSFET N-CHANNEL... |
1,968
In-stock
|
Inquiry | ||
|
Vishay | MOSFET N-CH 600V 41A... |
1,248
In-stock
|
Inquiry | ||
|
|
Vishay | MOSFET N-CH 600V 41A... |
1,192
In-stock
|
Inquiry | ||
|
Vishay | MOSFET N-CH 600V 41A... |
4,669
In-stock
|
Inquiry | ||
|
|
onsemi | MOSFET N-CHANNEL... |
1,629
In-stock
|
Inquiry | ||
|
NXP Semiconductors | N-CHANNEL POWER ... |
1,912
In-stock
|
Inquiry | ||
|
International Rectifier | HEXFET N-CHANNEL... |
4,716
In-stock
|
Inquiry |