- Manufacturer：
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- onsemi (11)
- Current - Continuous Drain (Id) @ 25°C：
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- Drain to Source Voltage (Vdss)：
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- FET Type：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Mounting Type：
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- Operating Temperature：
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- Package / Case：
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- Power Dissipation (Max)：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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31 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
Infineon Technologies | MOSFET N-CH 500V 4.5... |
1,951
In-stock
|
Inquiry | ||
|
onsemi | MOSFET P-CH 100V 6.6... |
4,377
In-stock
|
Inquiry | ||
|
Infineon Technologies | N-CHANNEL POWER M... |
3,971
In-stock
|
Inquiry | ||
|
onsemi | MOSFET P-CH 100V 6.6... |
4,482
In-stock
|
Inquiry | ||
|
onsemi | MOSFET P-CH 100V 8A... |
1,988
In-stock
|
Inquiry | ||
|
ROHM Semiconductor | 600V 7A TO-220FM, HIG... |
2,621
In-stock
|
Inquiry | ||
|
ROHM Semiconductor | MOSFET N-CH 600V 7A... |
3,478
In-stock
|
Inquiry | ||
|
ROHM Semiconductor | 650V 7A TO-220FM, HIG... |
3,195
In-stock
|
Inquiry | ||
|
|
onsemi | MOSFET P-CH 100V 6.6... |
4,918
In-stock
|
Inquiry | ||
|
onsemi | MOSFET P-CH 100V 8A... |
2,325
In-stock
|
Inquiry | ||
|
Diodes Incorporated | MOSFET N-CH 900V 2.5... |
2,654
In-stock
|
Inquiry | ||
|
Diodes Incorporated | MOSFET N-CHANNEL... |
1,447
In-stock
|
Inquiry | ||
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 900V 2.5... |
3,770
In-stock
|
Inquiry | ||
|
|
Diodes Incorporated | MOSFET N-CH 950V 2.5... |
2,332
In-stock
|
Inquiry | ||
|
|
ROHM Semiconductor | MOSFET N-CH 650V 7A... |
2,171
In-stock
|
Inquiry | ||
|
ROHM Semiconductor | HIGH-SPEED SWITC... |
946
In-stock
|
Inquiry | ||
|
Fairchild Semiconductor | MOSFET P-CH 100V 5.3... |
3,196
In-stock
|
Inquiry | ||
|
|
Diodes Incorporated | MOSFET N-CH 900V 2.5... |
823
In-stock
|
Inquiry | ||
|
|
ROHM Semiconductor | MOSFET N-CH 600V 7A... |
522
In-stock
|
Inquiry | ||
|
Fairchild Semiconductor | POWER FIELD-EFFE... |
2,401
In-stock
|
Inquiry |