- Current - Continuous Drain (Id) @ 25°C:
-
- Drain to Source Voltage (Vdss):
-
- FET Type:
-
- Input Capacitance (Ciss) (Max) @ Vds:
-
- Mounting Type:
-
- Operating Temperature:
-
- Package / Case:
-
- Power Dissipation (Max):
-
- Product Status:
-
- Rds On (Max) @ Id, Vgs:
-
- Supplier Device Package:
-
- Vgs(th) (Max) @ Id:
-
35 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
Vishay | MOSFET P-CH 100V 1.1... |
3,716
In-stock
|
Inquiry | ||
|
|
Vishay | MOSFET P-CH 100V 4A... |
4,603
In-stock
|
Inquiry | ||
|
Vishay | MOSFET P-CH 100V 4A... |
2,546
In-stock
|
Inquiry | ||
|
Vishay | MOSFET P-CH 100V 700... |
4,510
In-stock
|
Inquiry | ||
|
|
Vishay | MOSFET P-CH 100V 3.1... |
2,168
In-stock
|
Inquiry | ||
|
|
Vishay | MOSFET P-CH 100V 3.1... |
3,272
In-stock
|
Inquiry | ||
|
Fairchild Semiconductor | 100V P-CHANNEL MOS... |
1,966
In-stock
|
Inquiry | ||
|
Harris Corporation | 3.1A 100V 1.200 OHM P-C... |
945
In-stock
|
Inquiry | ||
|
Harris Corporation | 0.7A 100V 1.200 OHM P-C... |
4,143
In-stock
|
Inquiry | ||
|
Harris Corporation | MOSFET P-CH 100V 4A... |
4,589
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET N-CH 200V 11.... |
4,419
In-stock
|
Inquiry | ||
|
|
Vishay | MOSFET P-CH 100V 3.1... |
2,382
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET N-CH 200V 11.... |
623
In-stock
|
Inquiry | ||
|
Vishay | MOSFET P-CH 100V 1.1... |
2,651
In-stock
|
Inquiry | ||
|
Vishay | MOSFET P-CH 100V 4A... |
1,924
In-stock
|
Inquiry | ||
|
onsemi | MOSFET N-CH 80V 8A/... |
4,795
In-stock
|
Inquiry | ||
|
Vishay | MOSFET P-CH 100V 1.1... |
2,879
In-stock
|
Inquiry | ||
|
onsemi | MOSFET N-CH 80V 8A/... |
1,638
In-stock
|
Inquiry | ||
|
|
Vishay | MOSFET P-CH 100V 3.1... |
3,703
In-stock
|
Inquiry | ||
|
|
Vishay | MOSFET P-CH 100V 3.1... |
3,495
In-stock
|
Inquiry |
