- Drain to Source Voltage (Vdss)：
-
- FET Type：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Mounting Type：
-
- Operating Temperature：
-
- Package / Case：
-
- Power Dissipation (Max)：
-
- Product Status：
-
- Rds On (Max) @ Id, Vgs：
-
- Supplier Device Package：
-
90 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
Infineon Technologies | LOW POWER_LEGACY |
4,718
In-stock
|
Inquiry | ||
|
Infineon Technologies | 600V COOLMOS POWER... |
3,508
In-stock
|
Inquiry | ||
|
Infineon Technologies | N-CHANNEL POWER M... |
3,211
In-stock
|
Inquiry | ||
|
Infineon Technologies | COOLMOS N-CHANNE... |
604
In-stock
|
Inquiry | ||
|
Infineon Technologies | N-CHANNEL POWER M... |
1,070
In-stock
|
Inquiry | ||
|
PANJIT | 650V SUPER JUNCITO... |
636
In-stock
|
Inquiry | ||
|
|
Infineon Technologies | MOSFET N-CH 600V 7.3... |
2,242
In-stock
|
Inquiry | ||
|
Fairchild Semiconductor | MOSFET N-CH 100V 7.3... |
924
In-stock
|
Inquiry | ||
|
|
Fairchild Semiconductor | MOSFET P-CH 200V 7.3... |
1,279
In-stock
|
Inquiry | ||
|
Infineon Technologies | N-CHANNEL POWER M... |
990
In-stock
|
Inquiry | ||
|
|
Infineon Technologies | 600V, 0.6OHM, N-CHANN... |
1,308
In-stock
|
Inquiry | ||
|
|
Infineon Technologies | N-CHANNEL POWER M... |
4,688
In-stock
|
Inquiry | ||
|
|
Infineon Technologies | N-CHANNEL POWER M... |
1,067
In-stock
|
Inquiry | ||
|
Infineon Technologies | IPB65R600 - 650V AND 7... |
2,670
In-stock
|
Inquiry | ||
|
|
Infineon Technologies | MOSFET N-CH 600V 7.3... |
3,380
In-stock
|
Inquiry | ||
|
onsemi | MOSFET P-CH 200V 7.3... |
1,176
In-stock
|
Inquiry | ||
|
|
Infineon Technologies | MOSFET N-CH 600V 7.3... |
1,314
In-stock
|
Inquiry | ||
|
onsemi | MOSFET N-CH 600V 7.3... |
4,371
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET N-CH 650V 7.3... |
3,226
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET N-CH 650V 7.3... |
3,225
In-stock
|
Inquiry |