- Manufacturer:
-
- onsemi (2)
- Rectron USA (1)
- Vishay (2)
- FET Feature:
-
- FET Type:
-
- Gate Charge (Qg) (Max) @ Vgs:
-
- Input Capacitance (Ciss) (Max) @ Vds:
-
- Package / Case:
-
- Power Dissipation (Max):
-
- Product Status:
-
- Rds On (Max) @ Id, Vgs:
-
- Supplier Device Package:
-
24 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
|
Alpha and Omega Semiconductor, Inc. | MOSFET N-CH 30V 5.8A... |
2,546
In-stock
|
Inquiry | ||
|
Diodes Incorporated | MOSFET N-CH 30V 5.8A... |
3,653
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET N-CH 25V 5.8A... |
3,048
In-stock
|
Inquiry | ||
|
Diodes Incorporated | MOSFET P-CH 30V 5.8A... |
1,376
In-stock
|
Inquiry | ||
|
Diodes Incorporated | MOSFET BVDSS: 25V~... |
2,220
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET N-CH 30V 5.8A... |
3,271
In-stock
|
Inquiry | ||
|
Fairchild Semiconductor | MOSFET N-CH 50V 5.8A... |
4,222
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET P-CH 30V 5.8A... |
1,914
In-stock
|
Inquiry | ||
|
Rectron USA | MOSFET N-CHANNEL... |
3,407
In-stock
|
Inquiry | ||
|
International Rectifier | AUTOMOTIVE HEXFE... |
2,306
In-stock
|
Inquiry | ||
|
Diodes Incorporated | MOSFET BVDSS: 25V~... |
3,000
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET P-CH 30V 5.8A... |
2,618
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET N-CH 30V 5.8A... |
4,369
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET N-CH 30V 5.8A... |
3,856
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET P-CH 30V 5.8A... |
3,373
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET N-CH 30V 5.8A... |
1,479
In-stock
|
Inquiry | ||
|
onsemi | MOSFET N-CH 50V 5.8A... |
1,476
In-stock
|
Inquiry | ||
|
Diodes Incorporated | MOSFET N-CH 30V 5.8A... |
2,360
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET P-CH 30V 5.8A... |
4,018
In-stock
|
Inquiry | ||
|
Vishay | MOSFET N-CH 30V 5.8A... |
3,178
In-stock
|
Inquiry |
