- Current - Continuous Drain (Id) @ 25°C：
-
- FET Feature：
-
- FET Type：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Operating Temperature：
-
- Package / Case：
-
- Product Status：
-
- Rds On (Max) @ Id, Vgs：
-
- Supplier Device Package：
-
60 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
Infineon Technologies | MOSFET N-CH 20V 1.5A... |
3,079
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET N-CH 20V 1.5A... |
4,826
In-stock
|
Inquiry | ||
|
Texas Instruments | MOSFET N-CH 12V 2.9A... |
3,608
In-stock
|
Inquiry | ||
|
|
Infineon Technologies | MOSFET N-CH 20V 2.5A... |
4,091
In-stock
|
Inquiry | ||
|
|
Infineon Technologies | MOSFET P-CH 20V 1.5A... |
2,699
In-stock
|
Inquiry | ||
|
onsemi | MOSFET P-CH 20V 2.2A... |
1,139
In-stock
|
Inquiry | ||
|
Infineon Technologies | MOSFET N-CH 20V 3.8A... |
4,516
In-stock
|
Inquiry | ||
|
ROHM Semiconductor | MOSFET N-CH 60V 2A ... |
1,742
In-stock
|
Inquiry | ||
|
Texas Instruments | MOSFET N-CH 12V 2.9A... |
3,999
In-stock
|
Inquiry | ||
|
Infineon Technologies | SMALL SIGNAL N-CH... |
3,750
In-stock
|
Inquiry | ||
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 30V 2.2A... |
2,577
In-stock
|
Inquiry | ||
|
|
onsemi | MOSFET P-CH 20V 1.65... |
3,773
In-stock
|
Inquiry | ||
|
Diodes Incorporated | MOSFET N-CH 30V 2.6A... |
1,385
In-stock
|
Inquiry | ||
|
|
onsemi | MOSFET N-CH 30V 2.2A... |
4,555
In-stock
|
Inquiry | ||
|
|
onsemi | MOSFET N-CH 20V 1.7A... |
2,482
In-stock
|
Inquiry | ||
|
|
Diodes Incorporated | MOSFET N-CH 30V 2.6A... |
4,077
In-stock
|
Inquiry | ||
|
|
onsemi | MOSFET P-CH 20V 1.6A... |
1,221
In-stock
|
Inquiry | ||
|
|
onsemi | MOSFET P-CH 20V 1.3A... |
4,572
In-stock
|
Inquiry | ||
|
|
onsemi | MOSFET P-CH 20V 2.4A... |
3,856
In-stock
|
Inquiry | ||
|
|
onsemi | MOSFET N-CH 20V 3A ... |
3,176
In-stock
|
Inquiry |