- Drain to Source Voltage (Vdss)：
-
- Drive Voltage (Max Rds On, Min Rds On)：
-
- FET Type：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Mounting Type：
-
- Operating Temperature：
-
- Package / Case：
-
- Power Dissipation (Max)：
-
- Product Status：
-
- Rds On (Max) @ Id, Vgs：
-
- Supplier Device Package：
-
56 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
Vishay | MOSFET N-CH 250V 2.2... |
868
In-stock
|
Inquiry | ||
|
Harris Corporation | N-CHANNEL POWER M... |
2,752
In-stock
|
Inquiry | ||
|
Vishay | MOSFET N-CH 250V 2.2... |
3,767
In-stock
|
Inquiry | ||
|
STMicroelectronics | MOSFET N-CH 620V 2.2... |
705
In-stock
|
Inquiry | ||
|
Vishay | MOSFET N-CH 250V 2.2... |
1,277
In-stock
|
Inquiry | ||
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|
STMicroelectronics | MOSFET N-CH 620V 2.2... |
4,641
In-stock
|
Inquiry | ||
|
Vishay | MOSFET N-CH 600V 2.2... |
1,105
In-stock
|
Inquiry | ||
|
onsemi | MOSFET N-CH 900V 2.2... |
2,304
In-stock
|
Inquiry | ||
|
Fairchild Semiconductor | MOSFET P-CH 200V 2.2... |
2,807
In-stock
|
Inquiry | ||
|
|
Harris Corporation | N-CHANNEL POWER M... |
3,672
In-stock
|
Inquiry | ||
|
|
Harris Corporation | N-CHANNEL POWER M... |
4,629
In-stock
|
Inquiry | ||
|
Harris Corporation | N-CHANNEL POWER M... |
3,930
In-stock
|
Inquiry | ||
|
Fairchild Semiconductor | MOSFET N-CH 900V 2.2... |
689
In-stock
|
Inquiry | ||
|
Harris Corporation | N-CHANNEL POWER M... |
1,803
In-stock
|
Inquiry | ||
|
Vishay | MOSFET P-CH 80V 2.2A... |
2,628
In-stock
|
Inquiry | ||
|
|
Vishay | MOSFET N-CH 600V 2.2... |
2,708
In-stock
|
Inquiry | ||
|
STMicroelectronics | MOSFET N-CH 620V 2.2... |
2,165
In-stock
|
Inquiry | ||
|
STMicroelectronics | MOSFET N-CH 620V 2.2... |
796
In-stock
|
Inquiry | ||
|
Vishay | MOSFET N-CH 600V 2.2... |
4,168
In-stock
|
Inquiry | ||
|
|
Vishay | MOSFET P-CH 80V 2.2A... |
2,304
In-stock
|
Inquiry |