- Manufacturer：
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- onsemi (4)
- Current - Continuous Drain (Id) @ 25°C：
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- FET Feature：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Operating Temperature：
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- Power - Max：
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- Product Status：
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- Rds On (Max) @ Id, Vgs：
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- Supplier Device Package：
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18 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET 2N-CH 30V 4A... |
808
In-stock
|
Inquiry | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET 2N-CH 30V 4A... |
2,092
In-stock
|
Inquiry | ||
|
Texas Instruments | MOSFET 2N-CH 30V 5A... |
1,812
In-stock
|
Inquiry | ||
|
Texas Instruments | MOSFET 2N-CH 20V 5A... |
4,998
In-stock
|
Inquiry | ||
|
|
Toshiba Electronic Devices and Storage Corporation | SMALL LOW RON DUA... |
1,770
In-stock
|
Inquiry | ||
|
|
Toshiba Electronic Devices and Storage Corporation | SMALL LOW RON DUA... |
3,573
In-stock
|
Inquiry | ||
|
Fairchild Semiconductor | POWER FIELD-EFFE... |
1,106
In-stock
|
Inquiry | ||
|
Renesas Electronics Corporation | RQM2201DNS - N CHAN... |
1,752
In-stock
|
Inquiry | ||
|
|
Texas Instruments | MOSFET 2N-CH 20V 5A... |
866
In-stock
|
Inquiry | ||
|
|
Texas Instruments | MOSFET 2N-CH 30V 5A... |
960
In-stock
|
Inquiry | ||
|
onsemi | MOSFET 2N-CH 30V 2.5... |
3,589
In-stock
|
Inquiry | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET 2N-CH 30V 4A... |
2,792
In-stock
|
Inquiry | ||
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|
Toshiba Electronic Devices and Storage Corporation | MOSFET 2N-CH 20V 4A... |
1,322
In-stock
|
Inquiry | ||
|
Alpha and Omega Semiconductor, Inc. | MOSFET 2N-CH 30V 2A... |
4,655
In-stock
|
Inquiry | ||
|
|
Alpha and Omega Semiconductor, Inc. | MOSFET 2N-CH 30V 2A... |
1,903
In-stock
|
Inquiry | ||
|
onsemi | MOSFET 2N-CH 20V 4A... |
920
In-stock
|
Inquiry | ||
|
|
onsemi | MOSFET 2N-CH 30V 0.2... |
782
In-stock
|
Inquiry | ||
|
|
onsemi | MOSFET 2N-CH 30V 245... |
4,486
In-stock
|
Inquiry |